Ferroelectric based memory devices utilizing hydrogen barriers a

Details Ferroelectric based memory devices utilizing hydrogen barriers a Ferroelectric based memory devices utilizing hydrogen barriers a

1999-03-31

2000-05-23

Monin, Jr., Donald L.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257296, 257298, 257310, H01L 2976

Patent

active

060668687

ABSTRACT:
A ferroelectric memory cell for storing information. The information is stored in the remnant polarization of a ferroelectric dielectric layer by setting the direction of the remnant polarization. The ferroelectric memory cell is designed to store the information at a temperature less than a first temperature. The memory cell includes top and bottom contacts that sandwich the dielectric layer which includes a ferroelectric material having a Curie point greater than the first temperature and less than 400.degree. C. The dielectric layer is encapsulated in an oxygen impermeable material such that the encapsulating layer prevents oxygen from entering or leaving the dielectric layer. The memory also includes a hydrogen barrier layer that inhibits the flow of oxygen to the top and bottom electrodes when the memory cell is placed in a gaseous environment containing hydrogen. In one embodiment of the invention, a hydrogen absorbing layer is included. In the preferred embodiment of the present invention, the hydrogen barrier layer is constructed from a material that will also bind hydrogen ions.

REFERENCES:
patent: 5119154 (1992-06-01), Gnadinger
patent: 5316973 (1994-05-01), Wang et al.
patent: 5436477 (1995-07-01), Hashizume et al.
patent: 5561307 (1996-10-01), Mihara et al.
patent: 5572052 (1996-11-01), Kashihara et al.

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