Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1996-06-11
1997-10-21
Meier, Stephen
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257296, 3613215, H01L 27108, H01L 2976, H01L 2994, H01L 3162
Patent
active
056799691
ABSTRACT:
A ferroelectric based capacitor structure and method for making the same. The capacitor includes a bottom electrode having a layer of Pt in contact with a first layer of an ohmic material. The capacitor dielectric is constructed from a layer of lead zirconium titanate doped with an element having an oxidation state greater than +4. The top electrode of the capacitor is constructed from a second layer of ohmic material in contact with a layer of Pt. The preferred ohmic material is LSCO; although RuO.sub.2 may also be utilized. The capacitor is preferably constructed over the drain of an FET such that the bottom electrode of the capacitor is connected to the drain of the FET. The resulting capacitor structure has both low imprint and low fatigue.
REFERENCES:
patent: 5046043 (1991-09-01), Miller et al.
patent: 5216572 (1993-06-01), Larson et al.
patent: 5337279 (1994-08-01), Gregory et al.
patent: 5342648 (1994-08-01), MacKenzie et al.
patent: 5525528 (1996-06-01), Perino et al.
patent: 5561307 (1996-10-01), Mihara et al.
Evans, Jr. Joseph T.
Womack Richard H.
Meier Stephen
Radiant Technologies, Inc.
Ward Calvin B.
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