Ferrodielectric non-volatile semiconductor memory

Details Ferrodielectric non-volatile semiconductor memory Ferrodielectric non-volatile semiconductor memory

2005-10-18

2005-10-18

Auduong, Gene N. (Department: 2827)

Static information storage and retrieval

Systems using particular element

Ferroelectric

C365S149000

Reexamination Certificate

active

06956759

ABSTRACT:
A ferroelectric-type nonvolatile semiconductor memory comprising a bit line BL, a transistor for selection TR, a memory unit MU composed of memory cells MCMthat are M in number (M≧2), and plate lines PLMthat are M in number, in which each memory cell comprises a first electrode21, a ferroelectric layer22and a second electrode23; in the memory unit MU, the first electrodes21of the memory cells MCMare in common, and said common first electrode21is connected to the bit line BL through the transistor for selection TR; in the memory unit MU, the second electrode23of the m-th-place memory cell is connected to the m-th-place plate line PLm; and said ferroelectric-type nonvolatile semiconductor memory further comprises a circuit TRSfor short-circuiting the plate lines PLMthat are M in number and the common first electrode21.

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