Ferro-electric memory device

Details Ferro-electric memory device Ferro-electric memory device

2005-12-30

2009-06-09

Nguyen, Van Thu (Department: 2824)

Static information storage and retrieval

Read/write circuit

Differential sensing

C365S145000, C365S148000

Reexamination Certificate

active

07545696

ABSTRACT:
A ferro-electric memory device suppresses deterioration of retention characteristics at the time when an ambient temperature has decreased, without requiring a much longer cycle time. The ferro-electric memory device includes a first ferro-electric capacitor for use in a first normal cell and a second ferro-electric capacitor for use in a second normal cell. The ferro-electric memory device also includes: a temperature detection circuit which detects an ambient temperature of the first and second normal cells; and a normal cell power supply switching circuit which switches a voltage to be applied to the first and second ferro-electric capacitors depending on the detected temperature.

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patent: 2003-59251 (2003-02-01), None
English language Abstract of JP 2003-59251.

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