Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1996-03-08
1998-07-28
Wallace, Valencia Martin
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257336, 257344, 257345, 257403, 257404, H01L 2976, H01L 2994
Patent
active
057866201
ABSTRACT:
A Fermi-FET, including but not limited to a tub-FET, a contoured-tub Fermi-FET or a short channel Fermi-FET includes a drain extension region of the same conductivity type as the drain region and a drain pocket implant region of opposite conductivity type from the drain region. The drain pocket implant region acts as a drain field stop to reduce or prevent drain-to-source field reach-through. Reduced low drain field threshold voltage, significantly reduced drain induced barrier lowering and reduced threshold dependence on channel length may be obtained, resulting in higher performance in short channels.
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Dennen Michael W.
Richards, Jr. William R.
Martin Wallace Valencia
Thunderbird Technologies, Inc.
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