FeRAM having differential data

Static information storage and retrieval – Systems using particular element – Ferroelectric

Reexamination Certificate

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C365S230030

Reexamination Certificate

active

10876485

ABSTRACT:
A non-volatile ferroelectric memory device having differential datacomprises a plurality of cell array blocks and a data buffer unit. Each of the plurality of cell array blocks includes cell arrays and sense amplifiers. The cell array has a hierarchical bit line architecture and are divided into top and bottom groups where differential data are stored in a plurality of unit cells corresponding to differential main bit lines of the divided cell arrays. The sense amplifiers are positioned between the divided cell array groups for sensing the differential data. The data buffer unit temporarily stores a read data sensed by the sense amplifier and a write data received through a data I/O port.

REFERENCES:
patent: 6542424 (2003-04-01), Endo et al.
patent: 2003/0086312 (2003-05-01), Kang
patent: 1020030037789 (2003-05-01), None

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