Static information storage and retrieval – Systems using particular element – Ferroelectric
Reexamination Certificate
2007-05-01
2007-05-01
Tran, Michael (Department: 2827)
Static information storage and retrieval
Systems using particular element
Ferroelectric
C365S230030
Reexamination Certificate
active
10876485
ABSTRACT:
A non-volatile ferroelectric memory device having differential datacomprises a plurality of cell array blocks and a data buffer unit. Each of the plurality of cell array blocks includes cell arrays and sense amplifiers. The cell array has a hierarchical bit line architecture and are divided into top and bottom groups where differential data are stored in a plurality of unit cells corresponding to differential main bit lines of the divided cell arrays. The sense amplifiers are positioned between the divided cell array groups for sensing the differential data. The data buffer unit temporarily stores a read data sensed by the sense amplifier and a write data received through a data I/O port.
REFERENCES:
patent: 6542424 (2003-04-01), Endo et al.
patent: 2003/0086312 (2003-05-01), Kang
patent: 1020030037789 (2003-05-01), None
Jeong Dong Yun
Kang Hee Bok
Lim Jae Hyoung
Heller Ehrman LLP
Hynix / Semiconductor Inc.
Tran Michael
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