FeRAM having differential data

Static information storage and retrieval – Read/write circuit – For complementary information

Reexamination Certificate

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Details

C365S145000

Reexamination Certificate

active

10879138

ABSTRACT:
Disclosed is a non-volatile ferroelectric memory device having differential data, the device including: a plurality of cell array block groups having a hierarchy bit line structure and storing differential data; a common data bus being shared by a plurality of the cell array block groups, and transferring sensing voltages induced by the differential data; a column selection control unit selectively applying to the common data bus the induced sensing voltages of two main bit lines of the cell array block group according to the differential data; and a sense amp unit receiving the sensing voltages through the common data bus, comparing two sensing voltages induced by the differential data, and sensing the cell data. Therefore, the non-volatile ferroelectric memory device of the invention is capable of sensing a cell data more stably, independent of external factors and the state of a cell, by simultaneously sensing the stored data (differential data) in two unit cells and detecting the cell data.

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patent: 6215692 (2001-04-01), Kang
patent: 6600674 (2003-07-01), Kasai
patent: 6687163 (2004-02-01), Vega Ordonez
patent: 6822907 (2004-11-01), Maruyama et al.
patent: 6826712 (2004-11-01), Ono
patent: 6930908 (2005-08-01), Hoya et al.
patent: 2003/0086312 (2003-05-01), Kang
patent: 2003/0137865 (2003-07-01), Thompson et al.
patent: 2002-288980 (2002-10-01), None
patent: 1020030037789 (2003-05-01), None

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