Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-03-21
2006-03-21
Flynn, Nathan J. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S306000, C257S307000, C257S308000, C257S309000, C257S750000, C257S751000, C257S752000, C438S244000, C438S253000, C438S627000
Reexamination Certificate
active
07015531
ABSTRACT:
A FeRAM device in which a bottom electrode of a ferroelectric capacitor is connected to a source/drain region of a transistor and a top electrode is connected to a plate line. The FeRAM device comprises a semiconductor substrate; a gate electrode formed on the semiconductor substrate; an impurity region formed on each side of the gate electrode of the semiconductor substrate; a bottom electrode connected to the impurity region; an oxygen diffusion barrier layer formed on the bottom electrode; a ferroelectric layer formed on the oxygen diffusion barrier layer and the bottom electrode; and a top electrode formed on the ferroelectric layer.
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Erdem Fazli
Flynn Nathan J.
Hynix / Semiconductor Inc.
Mayer Brown Rowe & Maw LLP
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