FeRAM and sense amplifier array having data bus pull-down...

Details FeRAM and sense amplifier array having data bus pull-down... FeRAM and sense amplifier array having data bus pull-down...

2006-07-11

2006-07-11

Nguyen, Tuan T. (Department: 2824)

Static information storage and retrieval

Read/write circuit

Differential sensing

C365S205000, C365S189110, C365S189050

Reexamination Certificate

active

07075845

ABSTRACT:
A nonvolatile ferroelectric memory device features a data bus pull-down sensing function. The nonvolatile ferroelectric memory device having a data bus pull-down sensing function comprises a plurality of cell array blocks, a common data bus unit and a sense amplifier array unit. The sense amplifier array unit pulls down a voltage of the common data bus unit before read data are sensed to a predetermined level to improve transmission characteristics of cell data to a data bus. As a result, the data sensing speed is improved.

REFERENCES:
patent: 5646900 (1997-07-01), Tsukude et al.
patent: 6272594 (2001-08-01), Gupta et al.
patent: 6363439 (2002-03-01), Battles et al.
patent: 6462998 (2002-10-01), Proebsting
patent: 6785629 (2004-08-01), Rickes et al.
patent: 2005/0146972 (2005-07-01), Hong
patent: 1998-14400 (2000-07-01), None

Affiliated with

Also associated with

Rating

FeRAM and sense amplifier array having data bus pull-down... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with FeRAM and sense amplifier array having data bus pull-down..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and FeRAM and sense amplifier array having data bus pull-down... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3613144