Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Amorphous semiconductor
Reexamination Certificate
2005-08-04
2008-10-28
Ngo, Ngan (Department: 2818)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
Amorphous semiconductor
C438S940000, C257SE21347, C257SE21475
Reexamination Certificate
active
07442629
ABSTRACT:
The present invention generally provides semiconductor substrates having submicron-sized surface features generated by irradiating the surface with ultra short laser pulses. In one aspect, a method of processing a semiconductor substrate is disclosed that includes placing at least a portion of a surface of the substrate in contact with a fluid, and exposing that surface portion to one or more femtosecond pulses so as to modify the topography of that portion. The modification can include, e.g., generating a plurality of submicron-sized spikes in an upper layer of the surface.
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Mazur Eric
Shen Mengyan
Engellenner Thomas J.
Mollaaghababa Reza
Ngo Ngan
Nutter & McClennen & Fish LLP
President & Fellows of Harvard College
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