Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Reexamination Certificate
2006-09-05
2006-09-05
Coleman, W. David (Department: 2823)
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
C451S005000
Reexamination Certificate
active
07101799
ABSTRACT:
A method, apparatus and medium of conditioning a planarizing surface includes installing a wafer to be polished in a chemical mechanical polishing (CMP) apparatus having a polishing pad and a conditioning disk, polishing the wafer under a first set of pad conditioning parameters selected to maintain wafer material removal rates with preselected minimum and maximum removal rates, determining a wafer material removal rate occurring during the polishing step, calculating updated pad conditioning parameters to maintain wafer material removal rates within the maximum and minimum removal rates, and conditioning the polishing pad using the updated pad conditioning parameters, wherein the updated pad conditioning parameters are calculated using a pad wear and conditioning model that predicts the wafer material removal rate of the polishing pad based upon pad conditioning parameters, such as the conditioning down force and rotational speed of the conditioning disk.
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Applied Materials Inc.
Coleman W. David
Nguyen Khiem
Wilmer Cutler Pickering Hale and Dorr LLP
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