FB DRAM memory with state memory

Details FB DRAM memory with state memory FB DRAM memory with state memory

2008-07-23

2010-12-07

Luu, Pho M (Department: 2824)

Static information storage and retrieval

Systems using particular element

Capacitors

C365S150000, C365S205000, C365S206000, C365S207000

Reexamination Certificate

active

07848134

ABSTRACT:
A memory chip with a plurality of FB DRAM cells, having a word line coupled to a first FB DRAM cell and a second FB DRAM cell is disclosed. The memory chip further has a first bit line coupled to the first FB DRAM cell, and a first state memory circuit coupled to the first bit line. The memory chip further includes a second bit line coupled to the second FB DRAM cell, and a second state memory circuit coupled to the second bit line. The memory chip further includes a sense amplifier, which can be coupled to the first FB DRAM cell, the second FB DRAM cell, the first state memory circuit or the second state memory circuit.

REFERENCES:
patent: 7072205 (2006-07-01), Tang et al.
patent: 7230846 (2007-06-01), Keshavarzi et al.
patent: 7391640 (2008-06-01), Tang et al.
patent: 7433223 (2008-10-01), Kim et al.
patent: 7542345 (2009-06-01), Okhonin et al.
patent: 2005/0068807 (2005-03-01), Ohsawa
patent: 2007/0019844 (2007-01-01), Yumoto et al.

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