Fault-protected overvoltage switch employing isolated transistor

Details Fault-protected overvoltage switch employing isolated transistor Fault-protected overvoltage switch employing isolated transistor

1994-04-14

1995-02-14

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257357, 257372, 257374, H01L 2702, H01L 2906, H01L 2978

Patent

active

053898117

ABSTRACT:
An integrated-circuit (IC) chip formed with a fault-protected switch comprising three MOS transistors in series. Each transistor is placed in a corresponding tub of the IC chip. Each of these tubs is electrically isolated from all other sections of the IC chip, so that the MOS transistors are isolated from one another and from the chip voltage supplies.

REFERENCES:
patent: 3947727 (1976-03-01), Stewart
patent: 4739437 (1988-04-01), Morgan
patent: 5162888 (1992-11-01), Co et al.

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