1981-10-30
1984-07-17
Carroll, J.
357 20, 357 36, H01L 2906, H01L 2972
Patent
active
044609132
ABSTRACT:
The preferred embodiment of the invention disclosed herein is a transistor that includes a body of semiconductor material having first and second major surfaces. An emitter doped with atoms of one conductivity type is formed in the body and extends into it from the first major surface. The emitter geometry is such that it has hub portion and finger portions. Within the closed area formed by the hub portion of the emitter, there is provided a central region doped with atoms of the same conductivity type as the emitter and this central region is slightly spaced from the inner periphery of the hub portion. Over the central region and the space between it and the inner periphery of the emitter is provided an oxide layer over which electrode metallization is deposited so as to be in contact with the hub portion but spaced from the central region.
REFERENCES:
patent: 3453503 (1969-07-01), Schulz et al.
patent: 4322736 (1982-03-01), Sasaki et al.
patent: 4345266 (1982-08-01), Owyang
J. B. Gillett, "Power Transistor Having Increased Reverse Bias Safe Operating Area", IBM Technical Disclosure Bulletin, vol. 16, (1974), p. 3642.
Brackelmanns Norbert W.
Hulstrunk William
Carroll J.
Cohen Donald S.
Magee Thomas H.
Morris Birgit E.
RCA Corporation
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