Fast switching power insulated gate semiconductor device

Details Fast switching power insulated gate semiconductor device Fast switching power insulated gate semiconductor device

2008-01-28

2011-11-22

Loke, Steven (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S595000, C257SE29345, C257SE21364, C438S379000

Reexamination Certificate

active

08063426

ABSTRACT:
An insulated gate semiconductor device (30) includes a gate (34), a source terminal (36), a drain terminal (38) and a variable input capacitance at the gate. A ratio between the input capacitance (Cfiss) when the device is on and the input capacitance Ciisswhen the device is off is less than two and preferably substantially equal to one. This is achieved in one embodiment of the invention by an insulation layer32at the gate having an effective thickness dinslarger than a minimum thickness.

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