Fast switching diode with low leakage current

Active solid-state devices (e.g. – transistors – solid-state diode – With means to increase breakdown voltage threshold – With electric field controlling semiconductor layer having a...

Reexamination Certificate

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C257S492000, C257S144000, C257S152000, C257S487000

Reexamination Certificate

active

11088009

ABSTRACT:
A fast switching diode includes an n− layer having an upper surface and a lower surface and a first edge and a second edge, the second edge provided on an opposing side of the first edge. A converted region is provided proximate the upper surface of the n− layer. The converted region includes platinum and has a first depth. The converted region has a platinum concentration that is substantially greater than an n-type dopant concentration in the converted region. First and second n+ regions are provided proximate the first and second edges of the n− layer, respectively, and extend from the upper surface of the n− layer to second and third depths, respectively. Each of the second and third depths is greater than the first depth to reduce leakage current. A first electrode is provided proximate the upper surface of the n− layer. A second electrode is provided proximate the lower surface of the n− layer.

REFERENCES:
patent: 5747872 (1998-05-01), Lutz et al.
patent: 6358825 (2002-03-01), Hao et al.
patent: 6429501 (2002-08-01), Tsuchitani et al.
patent: 6707131 (2004-03-01), Kitamura et al.
Kwon et al., “Properties of Platinum-Associated Deep Levels in Silicon,”J. Appl. Phys.61(3), Feb. 1, 1987, 1055-1058.
Zimmerman et al., “Observation of Inverse U-Shaped Profiles After Platinum Diffusion in Silicon,”Appl. Phys. Lett., vol. 59, No. 10, Sep. 2, 1991, pp. 1209-1211.

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