Active solid-state devices (e.g. – transistors – solid-state diode – With means to increase breakdown voltage threshold – With electric field controlling semiconductor layer having a...
Reexamination Certificate
2007-08-21
2007-08-21
Pham, Long (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
With means to increase breakdown voltage threshold
With electric field controlling semiconductor layer having a...
C257S492000, C257S144000, C257S152000, C257S487000
Reexamination Certificate
active
11088009
ABSTRACT:
A fast switching diode includes an n− layer having an upper surface and a lower surface and a first edge and a second edge, the second edge provided on an opposing side of the first edge. A converted region is provided proximate the upper surface of the n− layer. The converted region includes platinum and has a first depth. The converted region has a platinum concentration that is substantially greater than an n-type dopant concentration in the converted region. First and second n+ regions are provided proximate the first and second edges of the n− layer, respectively, and extend from the upper surface of the n− layer to second and third depths, respectively. Each of the second and third depths is greater than the first depth to reduce leakage current. A first electrode is provided proximate the upper surface of the n− layer. A second electrode is provided proximate the lower surface of the n− layer.
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Kwon et al., “Properties of Platinum-Associated Deep Levels in Silicon,”J. Appl. Phys.61(3), Feb. 1, 1987, 1055-1058.
Zimmerman et al., “Observation of Inverse U-Shaped Profiles After Platinum Diffusion in Silicon,”Appl. Phys. Lett., vol. 59, No. 10, Sep. 2, 1991, pp. 1209-1211.
I-XYS Corporation
Pham Long
Townsend & Townsend & Crew LLP
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