Fast SRAM design using embedded sense amps

Details Fast SRAM design using embedded sense amps Fast SRAM design using embedded sense amps

1997-10-29

1999-11-23

Le, Vu A.

Static information storage and retrieval

Read/write circuit

Differential sensing

365207, G11C 700

Patent

active

059912170

ABSTRACT:
The speed of large SRAMs is improved by embedding sense amplifiers into the SRAM core. In this way, the bit line length that the SRAM cells must drive is very short and, thus, the slew rate is fast. An additional layer of metal is employed to route and accumulate the sense amp results vertically over the entire SRAM core. To reduce the required pitch of the additional metal layers, a sense amp muxing scheme is also provided.

REFERENCES:
patent: 5353255 (1994-10-01), Kumoro
patent: 5570319 (1996-10-01), Santoro et al.
patent: 5579273 (1996-11-01), Childers et al.

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