Fast remanent resistive ferroelectric memory

Details Fast remanent resistive ferroelectric memory Fast remanent resistive ferroelectric memory

2004-01-07

2009-11-17

Dickey, Thomas L (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE27104

Reexamination Certificate

active

07619268

ABSTRACT:
Memory element consisting of an electrode (2), a ferroelectric layer (3) adjoining the latter, a layer (4) made from non-ferroelectric material adjoining the ferroelectric layer (3) and an electrode (5) adjoining the layer (4) made from non-ferroelectric material, wherein the ferroelectric layer is at least 10 nanometers thick, the electrical resistance, which is formed by the non-ferroelectric layer and the ferroelectric layer, depends upon the direction of polarization in the ferroelectric layer, and wherein the memory element comprises means for measuring the electrical resistance of the non-ferroelectric layer and the ferroelectric layer.

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Leo Esaki, “Long Journey Into Tunneling,” Nobel Lecture, Dec. 12, 1973, pp. 119-120.

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