Static information storage and retrieval – Addressing – Multiple port access
Reexamination Certificate
2007-04-20
2008-07-08
Le, Vu A (Department: 2824)
Static information storage and retrieval
Addressing
Multiple port access
C365S154000
Reexamination Certificate
active
07397723
ABSTRACT:
Separate read and write ports in a memory system allow simultaneous access to a memory cell array by read and write operations. A single cycle operation of a central processing unit coupled to a memory array depends on a memory access capability providing simultaneous reading and writing to different locations. A pair of pull-down transistor stacks connected to memory cell latch loops allows a single selected pull-down stack of the pair to toggle a memory cell latch loop to a desired data content without any requirement for a precharge scheme. A single pull-down stack of transistors connected to a memory cell latch loop provides a read port with low input loading. A sense amplifier provides a mid-supply-level precharging capability provided by a feedback device within a front-end inversion stage. When not in a feedback mode, the front-end inversion stage cascaded with a second inversion stage provides a rapid read response.
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Froemming Benjamin F.
Lambrache Emil
Atmel Corporation
Le Vu A
Schwegman Lundberg & Woessner, P.A.
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