Fast power semiconductor circuit

Details Fast power semiconductor circuit Fast power semiconductor circuit

1990-01-11

1991-06-25

Hille, Rolf

357 38, H01L 2702, H01L 2314

Patent

active

050271920

ABSTRACT:
In a fast power semiconductor circuit with a gate turn-off component in the form of a large-area semiconductor substrate (9) and a drive circuit, which is connected to gate and cathode of the component and generates a current pulse suitable for turning off the component, a low-inductive connection is realized between component and drive circuit by a stripline (28) in the form of a metal-laminated plastic film.
The upper metallization (1) of the stripline (28) serves in this case essentially as feed to the cathode of the component, the lower metallization (3) serves essentially as feed to the gate.

REFERENCES:
patent: 3358196 (1967-12-01), Steinmetz et al.
patent: 3519895 (1970-07-01), Marino et al.
patent: 4259684 (1981-03-01), Dean et al.
patent: 4476446 (1984-10-01), Blight
patent: 4574299 (1986-03-01), Glascock, II et al.
patent: 4768075 (1988-08-01), Broich et al.
patent: 4920406 (1990-04-01), Watanabe et al.

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