Fast magnetic memory devices utilizing spin transfer and...

Details Fast magnetic memory devices utilizing spin transfer and... Fast magnetic memory devices utilizing spin transfer and...

2007-10-30

2007-10-30

Tran, Michael T (Department: 2827)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S173000

Reexamination Certificate

active

11147944

ABSTRACT:
A method and system for providing a magnetic memory is described. The method and system include providing a plurality of magnetic storage cells, a plurality of word lines, and a plurality of bit lines. Each of the plurality of magnetic storage cells includes a plurality of magnetic elements and at least one selection transistor. Each of the plurality of magnetic elements is capable of being programmed using spin transfer induced switching by a write current driven through the magnetic element. Each of the plurality of magnetic elements has a first end and a second end. The at least one selection transistor is coupled to the first end of each of the plurality of magnetic elements. The plurality of word lines is coupled with the plurality of selection transistors and selectively enables a portion of the plurality of selection transistors.

REFERENCES:
patent: 2002/0006058 (2002-01-01), Nakajima et al.
patent: 2004/0160809 (2004-08-01), Lin et al.
patent: 2004/0165424 (2004-08-01), Tsang
patent: 2004/0165425 (2004-08-01), Nakamura et al.
patent: 2005/0073897 (2005-04-01), Miyatake et al.
J.C. Slonczewski,Current-Driven Excitation of Magnetic Multilayers, Journal of Magnetism and Magnetic Materials, vol. 59, pp. L1-L7 (1996).

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