Fast, low power, write scheme for memory circuits using pulsed o

Details Fast, low power, write scheme for memory circuits using pulsed o Fast, low power, write scheme for memory circuits using pulsed o

1998-12-09

2000-09-19

Hoang, Huan

Static information storage and retrieval

Read/write circuit

Flip-flop used for sensing

365149, 36518901, G11C 700

Patent

active

061222119

ABSTRACT:
A circuit, for controlling a write operation during which data from data lines is written to a memory cell, is used with a memory cell of the type that is connected to a row line and a first column line. An amplifier is connected across the first column line and a column line complimentary to the first column line. The column lines have a capacitance associated therewith. The circuit includes a control circuit for generating switching control signals. Switches are provided which are positioned in the column lines and are responsive to the switching control signals for selectively isolating at least a portion of the column lines during a predetermined portion of the write operation.

REFERENCES:
patent: 4636987 (1987-01-01), Norwood et al.
patent: 4748349 (1988-05-01), McAlexander, III et al.
patent: 4916667 (1990-04-01), Miyabayashi et al.
patent: 5014245 (1991-05-01), Muroka et al.
patent: 5029137 (1991-07-01), Hoshi
patent: 5053997 (1991-10-01), Miyamato et al.
patent: 5138578 (1992-08-01), Fujii
patent: 5193075 (1993-03-01), Hatano et al.
patent: 5227697 (1993-07-01), Sakagami
patent: 5235547 (1993-08-01), Kobayashi
patent: 5255243 (1993-10-01), Kitazawa
patent: 5258950 (1993-11-01), Murashima et al.
patent: 5265050 (1993-11-01), McLaury
patent: 5313431 (1994-05-01), Uruma et al.
patent: 5341331 (1994-08-01), Jeon
patent: 5361231 (1994-11-01), Hayano
patent: 5369620 (1994-11-01), Sugibayashi
patent: 5369662 (1994-11-01), McLaury
patent: 5418753 (1995-05-01), Seki
patent: 5506811 (1996-04-01), McLaury

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