Fast, low cost method of developing code for contact programmabl

Static information storage and retrieval – Read/write circuit – Having fuse element

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Details

36518911, G11C 700

Patent

active

060210796

ABSTRACT:
Methods are disclosed to make an anti-fuse PROM which can be embedded into a conventional CMOS process with few additional processing steps and a small additional area for the write circuitry. Nominal, low voltage transistors are used to program the PROM such that these transistor remain functional some time after programming for the purposes of verifying functionality of the memory's programming code. Once the program code has been verified a low cost production version of the part can be instantly made using standard ROM mask programming.

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patent: 5130777 (1992-07-01), Galbraith et al.
patent: 5233206 (1993-08-01), Lee et al.
patent: 5242851 (1993-09-01), Choi
patent: 5282158 (1994-01-01), Lee
patent: 5391518 (1995-02-01), Bhushan

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