Fast flush for a first-in first-out memory

Static information storage and retrieval – Systems using particular element – Flip-flop

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365190, G11C 1100

Patent

active

048021229

ABSTRACT:
In a memory circuit including a write bit-line for writing data into a memory cell, and a read bit-line for reading data from the cell, a transistor is included, connected with the write bit-line and the read bit-line, so that when a fast flush signal is applied to the gate of that transistor, direct connection is made between the write bit-line and read bit-line, so that data is written into the cell, but can be read simultaneously from the read bit-line, reducing the fall-through delay.

REFERENCES:
patent: 4447891 (1984-05-01), Kadota
patent: 4535427 (1985-08-01), Jiang
patent: 4541076 (1985-09-01), Bowers et al.

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