Fast access AMG EPROM with segment select transistors which have

Details Fast access AMG EPROM with segment select transistors which have Fast access AMG EPROM with segment select transistors which have

1994-03-16

1995-07-25

Limanek, Robert P.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

365185, 36523006, H01L 2978

Patent

active

054364787

ABSTRACT:
The current driven by the segment select transistors of an alternate-metal, virtual-ground (AMG) electrically programmable read-only-memory (EPROM), is increased by eliminating the even numbered segment select transistors in every other row of segment select transistors, and the odd numbered segment select transistors in the remaining rows, and by changing the current path through the segment so that the current flows from a segment select transistor in one row of segment select transistors to a segment select transistor in an adjacent row of transistors. By eliminating every other segment select transistor in each row of transistors, the maximum pitch of the segment select transistors can be substantially increased, thereby providing the required programming current, while at the same time maintaining the required isolation between adjacent segment select transistors.

REFERENCES:
patent: 5246874 (1993-09-01), Bergemont
patent: 5315541 (1994-05-01), Harari et al.

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