Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Reexamination Certificate
2005-11-23
2008-10-28
Berman, Jack I. (Department: 2881)
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
C250S489000, C250S397000, C250S3960ML
Reexamination Certificate
active
07442945
ABSTRACT:
A Faraday assembly of an ion implantation apparatus includes a Faraday cup in a vacuum chamber, a driving shaft to which the Faraday cup is connected, a motor for inserting the driving shaft further into and drawing the driving shaft out of the vacuum chamber to cause the Faraday cup to advance and retreat within the chamber, and an auxiliary supplier of power for exerting a force that acts on the driving shaft as the driving shaft is being extracted by the motor from the vacuum chamber. Therefore, the force of suction, due to a pressure difference between interior and exterior of the vacuum chamber, is prevented from overloading the motor as the Faraday cup retreats within the vacuum chamber. As a result, the Faraday cup is positioned precisely and efficiently within the vacuum chamber.
REFERENCES:
patent: 2756133 (1956-07-01), Butzin
patent: 3187601 (1965-06-01), Glenn
patent: 4271710 (1981-06-01), Brems
patent: 4492504 (1985-01-01), Hainsworth
patent: 5984353 (1999-11-01), Rasmussen
patent: 6408745 (2002-06-01), Topolewski et al.
patent: 6437351 (2002-08-01), Smick et al.
patent: 6525327 (2003-02-01), Mitchell et al.
patent: 6852984 (2005-02-01), Krueger
patent: 2002/0109106 (2002-08-01), Berrian et al.
patent: 2003/0041708 (2003-03-01), Kawatsu et al.
patent: 2003/0197133 (2003-10-01), Turner et al.
patent: 2005/0218336 (2005-10-01), Mori
patent: 2007/0023701 (2007-02-01), Fishione et al.
patent: 2001-229872 (2001-08-01), None
patent: 2001091553 (2001-10-01), None
patent: 2004070634 (2004-08-01), None
patent: 1020040070634 (2004-08-01), None
patent: 1020040076964 (2004-09-01), None
Hwang Sun-Ho
Park Sang-Kuk
Berman Jack I.
Logie Michael J
Samsung Electronics Co,. Ltd.
Volentine & Whitt PLLC
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