Far UV patterning of resist materials

Details Far UV patterning of resist materials Far UV patterning of resist materials

1982-12-09

1983-11-08

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156643, 156668, 156904, 219121LM, 2504921, 427 431, 427 531, 427 541, 427272, 430313, 430945, B44C 122, C03C 1500, C03C 2506, B05D 306

Patent

active

044140592

ABSTRACT:
A technique is described for the fabrication of devices and circuits using multiple layers of materials, where patterned layers of resists are required to make the device or circuit. The fabrication process is characterized by the selective removal of portions of the resist layer by ablative photodecomposition. This decomposition is caused by the incidence of ultraviolet radiation of wavelengths less than 220 nm, and power densities sufficient to cause fragmentation of resist polymer chains and the immediate escape of the fragmented portions from the resist layer. Energy fluences in excess of 10 mJ/cm.sup.2 /pulse are typically required. The deliverance of a large amount of energy in this wavelength range to the resist layer in a sufficiently short amount of time causes ablation of the polymer chain fragments. No subsequent development step is required for patterning the resist layer.

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IBM Technical Disclosure Bulletin, vol. 21, No. 4, Sep. 1978, p. 1475, Method for Patterning Resists, R. K. Agnihotri et al.
Y. Kawamura et al., "Effective Deep UV Photoetching . . . . . " Appl. Phys. Letts. 46(5), 1 Mar. 1982, pp. 374-375.
T. R. Loree et al., "Spectral Tuning of ArF and KrF . . . . . ", Appl. Phys. Lett. 32(3) 1 Feb. 78, pp. 171-173.

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