Facing-targets-type sputtering apparatus

Chemistry: electrical and wave energy – Apparatus – Coating – forming or etching by sputtering

Reexamination Certificate

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Details

C204S298190, C204S298110, C204S298160, C204S298090

Reexamination Certificate

active

06881311

ABSTRACT:
Disclosed is a facing-targets-type sputtering apparatus including a sputtering unit including a pair of facing targets which are disposed a predetermined distance away from each other, and permanent magnets serving as magnetic-field generation means which are disposed around each of the facing targets, the permanent magnets being provided so as to generate a facing-mode magnetic field and a magnetron-mode magnetic field, the facing-mode magnetic field extending in the direction perpendicular to the facing targets in such a manner as to surround a confinement space provided between the targets, and the magnetron-mode magnetic field extending from the vicinity of a peripheral edge portion of each of the targets to a center portion thereof, thereby confining plasma within the confinement space by means of these magnetic fields for forming a thin film on a substrate disposed beside the confinement space, which apparatus further includes magnetic-field regulation means for regulating the magnetron-mode magnetic field. The magnetic-field regulation means is formed of, for example, a permanent magnet, and is provided on the back side of each of the targets.

REFERENCES:
patent: 4407894 (1983-10-01), Kadokura et al.
patent: 4427524 (1984-01-01), Crombeen et al.
patent: 4600490 (1986-07-01), Gillery et al.
patent: 4784739 (1988-11-01), Kadokura et al.
patent: 4880515 (1989-11-01), Yoshikawa et al.
patent: 5196105 (1993-03-01), Feuerstein et al.
patent: 6156172 (2000-12-01), Kadokura
patent: B2 62-14633 (1987-04-01), None
patent: B2 63-20303 (1988-04-01), None
patent: B2 63-20304 (1988-04-01), None
patent: B2 H5-75827 (1993-10-01), None
patent: A H10-330936 (1998-12-01), None

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