Facet etch for improved step coverage of integrated circuit cont

Details Facet etch for improved step coverage of integrated circuit cont Facet etch for improved step coverage of integrated circuit cont

1996-01-31

1998-03-24

Powell, William

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

1566431, 1566441, 257750, 437189, H01L 2100, C23F 100

Patent

active

057308357

ABSTRACT:
Disclosed is a method for providing improved step coverage of contacts with conductive materials, and particularly metals. A conductive layer is deposited over an insulating layer, either before or after contact opening formation. After both conductive layer deposition and contact formation, a facet etch is performed to slope the conductive layer overlying the contact lip while depositing material from the conductive layer into the lower corner of the contact, where coverage has traditionally been poor. A second conductive layer may then be deposited into the contact to supplement coverage provided by the first conductive layer and the facet etch.

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