Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1994-02-14
1995-06-20
Jackson, Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257184, 257432, 257437, 257458, 359248, H01L 310304, H01L 31075, H01L 29205
Patent
active
054263123
ABSTRACT:
An asymmetric Fabry-Perot modulator comprises a multiple quantum well (MQW) p-i-n diode (8, 10, 12) defined by a front surface of reflectivity 0.3 and back surface of reflectivity 0.95. The cavity length L is such that resonance occurs close to the long wavelength side of the unbiased MQW absorption edge so that application of a bias signal to the MQW (12) causes the reflectivity of the cavity to become close to zero. This arrangement provides a high contrast modulator less sensitive to temperature variations and deviations from ideal reflectivities of the front and back surfaces than high-finesse Fabry-Perot modulators.
REFERENCES:
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British Telecommunications public limited company
Jackson Jerome
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