Fabrication technique using sputter etch and vacuum transfer

Details Fabrication technique using sputter etch and vacuum transfer Fabrication technique using sputter etch and vacuum transfer

2008-06-03

2008-06-03

Estrada, Michelle (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S626000, C438S627000, C438S631000, C438S633000, C438S639000, C438S643000, C438S645000, C438S675000, C438S687000, C438S690000, C438S692000, C438S695000, C438S696000, C257SE21575, C257SE21583, C257SE21584, C257SE21585, C257SE21587

Reexamination Certificate

active

07381638

ABSTRACT:
First material (106) is situated on the surface of a substructure (100and102) and in an opening (104), such as a Wench, that extends partway through the substructure. Second material (108) is situated on the first material in the opening. A physical sputter etch is performed on the structure while it is in a sputter etch module (206) to remove the parts of the first material overlying the substructure's surface and situated above the opening and to remove part of the second material overlying the first material in the opening so that remaining parts of the first and second materials are situated in the opening. The so-modified structure is transferred from the sputter etch module under a substantial vacuum, normally via a transfer module (202), to a deposition module (203, 204, or205) where a layer of third material is deposited over the substructure's surface and over the parts of the first and second materials in the opening.

REFERENCES:
patent: 3911579 (1975-10-01), Lane et al.
patent: 4521286 (1985-06-01), Horwitz
patent: 4643629 (1987-02-01), Takahashi et al.
patent: 4675096 (1987-06-01), Tateishi et al.
patent: 4818359 (1989-04-01), Jones et al.
patent: 5089442 (1992-02-01), Olmer
patent: 5455194 (1995-10-01), Vasquez et al.
patent: 5877078 (1999-03-01), Yanagida
patent: 5933756 (1999-08-01), Fuse
patent: 5969422 (1999-10-01), Ting et al.
patent: 5985762 (1999-11-01), Geffken et al.
patent: 6010603 (2000-01-01), Ye et al.
patent: 6136680 (2000-10-01), Lai et al.
patent: 6174800 (2001-01-01), Jang
patent: 6218303 (2001-04-01), Lin
patent: 6271121 (2001-08-01), Webb
patent: 6287968 (2001-09-01), Yu et al.
patent: 6287977 (2001-09-01), Hashim et al.
patent: 6350694 (2002-02-01), Chang et al.
patent: 6376355 (2002-04-01), Yoon et al.
patent: 6440844 (2002-08-01), Takagi et al.
patent: 6812141 (2004-11-01), Gaidis et al.

Affiliated with

Also associated with

Rating

Fabrication technique using sputter etch and vacuum transfer does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Fabrication technique using sputter etch and vacuum transfer, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Fabrication technique using sputter etch and vacuum transfer will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2813523