Fabrication process of a semiconductor integrated circuit device

Details Fabrication process of a semiconductor integrated circuit device Fabrication process of a semiconductor integrated circuit device

1996-06-10

1998-12-01

Everhart, Caridad

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438669, 438671, 438720, H01L 21441

Patent

active

058438416

ABSTRACT:
A method for fabricating a semiconductor integrated circuit includes the steps of providing a conductor film on a substrate, providing an insulator film on the conductor film to form a layered structure, removing the insulator film selectively from a first part thereof corresponding to a conductor pattern to be formed, while remaining the insulator film on a second part thereof corresponding also to a conductor pattern to be formed, patterning the layered structure to form a conductor pattern defined by side walls, providing a side wall insulation to each of the side walls of the conductor pattern, providing a first local interconnect pattern on the first part of the conductor pattern such that the first local interconnect pattern establishes an electrical connection with the conductor pattern at the first part, and providing a second local interconnect pattern on the second part of the conductor pattern such that the second local interconnect pattern bridges across the conductor pattern at the second part, without establishing electrical connection therewith.

REFERENCES:
patent: 4988643 (1991-01-01), Tsuo
patent: 5323049 (1994-06-01), Motonami
patent: 5401666 (1995-03-01), Tsukamoto
patent: 5496771 (1996-03-01), Cronin et al.

Affiliated with

Also associated with

Rating

Fabrication process of a semiconductor integrated circuit device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Fabrication process of a semiconductor integrated circuit device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Fabrication process of a semiconductor integrated circuit device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2395458