Fabrication process of a semiconductor integrated circuit...

Details Fabrication process of a semiconductor integrated circuit... Fabrication process of a semiconductor integrated circuit...

2006-01-10

2006-01-10

Geyer, Scott (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

C438S660000

Reexamination Certificate

active

06984575

ABSTRACT:
Disclosed is a fabrication process of a highly reliable semiconductor device formed by stacking and pattering a polycrystalline silicon film, a tungsten nitride film and a tungsten film over a gate insulator film on a semiconductor substrate, thereby forming gate electrodes. Then, a conductive plasma processing is performed using an ammonia gas at a temperature for the semiconductor substrate of 500° C. or lower, thereby nitriding the side wall for the gate electrode to form a nitride film, and then conducting plasma processing by using an oxygen gas in a state at a temperature for the semiconductor substrate of 500° C. or lower thereby restoring damages or defects in the silicon oxide film present in the surface portion of the semiconductor substrate at the periphery of the gate electrode.

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