Fabrication process of a semiconductor device using ellipsometry

Details Fabrication process of a semiconductor device using ellipsometry Fabrication process of a semiconductor device using ellipsometry

1996-12-27

2000-08-15

Chin, Christopher L.

Optics: measuring and testing

By dispersed light spectroscopy

356305, 356310, 356322, 356337, 356340, 356345, 356351, 356364, 356128, 2504921, 2504922, 25049222, 2504923, G01J 300

Patent

active

061044865

ABSTRACT:
A method of fabricating a semiconductor device includes the steps of illuminating a structure formed on a surface of a substrate by an incident optical beam incident to the structure with a predetermined incident angle with respect to the surface, measuring a polarization state of an exiting optical beam exiting from the structure in response to an illumination of the structure by the incident optical beam, and evaluating a size of the structure in a direction parallel to the surface from the polarization state of the exiting optical beam, and adjusting a parameter of production of a semiconductor device in response to the size.

REFERENCES:
patent: 4653924 (1987-03-01), Itonaga et al.
patent: 5349197 (1994-09-01), Sakamoto et al.
patent: 5404019 (1995-04-01), Ohno et al.
"Ultraviolet-visible ellipsometry for process control during the etching of submicrometer features", N. Blayo et al., AT&T Bell Laboratories, Murray Hill, New Jersey (Sep. 28, 1994); Optical Society of America, vol. 12, No. 3/Mar. 1995, pp. 591-599.

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