Fabrication process of a semiconductor device to form...

Details Fabrication process of a semiconductor device to form... Fabrication process of a semiconductor device to form...

2011-06-28

2011-06-28

Sefer, A. (Department: 2893)

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

C257SE21444, C257SE21453

Reexamination Certificate

active

07968466

ABSTRACT:
A method for fabricating an electron device on a substrate includes the steps of forming a dummy film over the substrate such that the dummy film covers a device region of the substrate and an outer region of the substrate outside the device region, forming a dummy pattern by patterning the dummy film such that the dummy pattern has a first height in the device region and a second height smaller than the first height in the outer region, forming another film over the substrate such that the film covers the dummy pattern in the device region and in the outer region with a shape conformal to a cross-sectional shape of the dummy pattern, and applying an anisotropic etching process acting generally perpendicularly to the substrate such that a surface of the substrate is exposed in the device region and in the outer region.

REFERENCES:
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patent: 5828120 (1998-10-01), Ishikawa
patent: 6128214 (2000-10-01), Kuekes et al.
patent: 6256767 (2001-07-01), Kuekes et al.
patent: 6271573 (2001-08-01), Suguro
patent: 6314019 (2001-11-01), Kuekes et al.
patent: 2002-280388 (2002-09-01), None
Korean Office Action dated Dec. 12, 2008, issued in corresponding Korean Patent Application No. 10-2007-0122289.

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