Fabrication process of a semiconductor device having an intercon

Details Fabrication process of a semiconductor device having an intercon Fabrication process of a semiconductor device having an intercon

1996-07-18

1999-11-02

Everhart, Caridad

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438666, 438700, H01L 2144

Patent

active

059769718

ABSTRACT:
A method of fabricating a semiconductor device includes the steps of forming a contact hole in an insulator layer, filling the contact hole by a conductor material, removing the conductor material from the upper major surface of the insulator layer to form a conductive plug such that the conductive plug fills the contact hole, applying an anisotropic etching process upon the insulator layer, such that the anisotropic etching process acts substantially vertically and selectively to the insulator layer, with an etching rate substantially larger than an etching rate for the conducive plug.

REFERENCES:
patent: 4714686 (1987-12-01), Sander et al.
patent: 4944836 (1990-07-01), Beyer et al.
patent: 5244534 (1993-09-01), Yu et al.
patent: 5286675 (1994-02-01), Chen et al.
patent: 5525840 (1996-06-01), Tominaga
patent: 5571751 (1996-11-01), Chung
patent: 5591673 (1997-01-01), Chao et al.

Affiliated with

Also associated with

Rating

Fabrication process of a semiconductor device having an intercon does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Fabrication process of a semiconductor device having an intercon, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Fabrication process of a semiconductor device having an intercon will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2134821