Fabrication process of a semiconductor device having a multilaye

Details Fabrication process of a semiconductor device having a multilaye Fabrication process of a semiconductor device having a multilaye

1996-10-11

1999-08-03

Chaudhuri, Olik

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438685, 438644, 20419232, H01L 21441

Patent

active

059337567

ABSTRACT:
A method of forming a multilayer interconnection structure includes the steps of forming a contact hole in an interlayer insulation film, depositing the contact hole by a conductive plug of a refractory element, applying a sputter-etching process to the interlayer insulation film to form a tapered part at a top part of the contact hole while using the conductive plug as an etching stopper, and filling the tapered part of the contact hole by a conductor material by a sputtering process.

REFERENCES:
patent: 4933297 (1990-06-01), Lu
patent: 5091049 (1992-02-01), Campbell et al.
patent: 5286675 (1994-02-01), Chen et al.
patent: 5371042 (1994-12-01), Ong
patent: 5475266 (1995-12-01), Rodder
patent: 5519239 (1996-05-01), Chu

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