Fabrication process of a semiconductor device

Details Fabrication process of a semiconductor device Fabrication process of a semiconductor device

2006-05-16

2008-09-30

Garber, Charles D. (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

C438S199000, C438S369000, C438S581000, C438S583000, C438S682000, C257SE21438, C257SE21439

Reexamination Certificate

active

07429525

ABSTRACT:
A method of fabricating a semiconductor device includes the steps of forming a metallic nickel film on a silicon substrate such that the metallic nickel film covers an insulation film on the silicon substrate and a silicon surface of the silicon substrate, annealing the silicon substrate in a silane gas ambient at a temperature not exceeding 220° C. to form a first nickel silicide layer having a composition primarily of Ni2Si on the silicon surface and a surface of the metallic nickel film, removing the metallic nickel film after the step of forming the nickel silicide layer by a wet etching process, and converting the first nickel silicide layer to a second nickel silicide layer primarily of nickel monosilicide (NiSi) by applying a thermal annealing process.

REFERENCES:
patent: 2005/0272215 (2005-12-01), Lee
patent: 61-128521 (1986-06-01), None
patent: 2004-356216 (2004-12-01), None

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