Semiconductor device manufacturing: process – Chemical etching – Combined with coating step
Patent
1999-03-29
2000-12-05
Utech, Benjamin L.
Semiconductor device manufacturing: process
Chemical etching
Combined with coating step
438696, 438745, 438751, H01L 21311
Patent
active
061566624
ABSTRACT:
A method of fabricating a liquid crystal display device includes the step of removing a porous anodic oxide film selectively with respect to a barrier-type anodic oxide film covering a gate electrode pattern of a thin-film transistor, wherein the step of removing the porous anodic oxide film is conducted after the step of disconnecting a bridging conductor pattern used for supplying electric current at the time of anodic oxidation process of the gate electrode.
REFERENCES:
patent: 5397719 (1995-03-01), Kin et al.
patent: 5508209 (1996-04-01), Zhang et al.
patent: 5861326 (1999-01-01), Yamazaki et al.
patent: 5885888 (1999-03-01), Konuma et al.
patent: 6049092 (2000-04-01), Konuma et al.
Kakehi Tatsuya
Ohgata Kohji
Ohori Tatsuya
Wada Tamotsu
Yanai Ken-ichi
Chen Kin-Chan
Fujitsu Limited
Utech Benjamin L.
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