Fabrication process for thin film transistor

Details Fabrication process for thin film transistor Fabrication process for thin film transistor

1996-11-14

1998-10-27

Niebling, John

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Amorphous semiconductor

438487, H01L 2120

Patent

active

058277722

ABSTRACT:
A thin film transistor has an active layer of a polycrystalline silicon. The crystallizing ability of polycrystalline silicon layer is improved by oxygen annealing. Oxygen concentration increased by oxygen annealing can be reduced by annealing under hydrogen atmosphere for providing increased carrier mobility for good high frequency characteristics.

REFERENCES:
patent: 5403762 (1995-04-01), Takemura
patent: 5470763 (1995-11-01), Hamada
patent: 5508207 (1996-04-01), Horai
patent: 5663077 (1997-09-01), Adachi
Y. Fukushima et al., "A Poly-Si TFT Process for High Speed and Low Voltage CMOS Circuits", Ext'd Abs of the 1993 Int'l Conference on Solid State Devices and Materials, Makuhari, 1993, pp. 993-995.

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