Fabrication process for Al.sub.x In.sub.1-x As/Ga.sub.y In.sub.1

Details Fabrication process for Al.sub.x In.sub.1-x As/Ga.sub.y In.sub.1 Fabrication process for Al.sub.x In.sub.1-x As/Ga.sub.y In.sub.1

1995-06-07

1997-07-08

Fourson, George

Fishing, trapping, and vermin destroying

437190, H01L 2945, H01L 21283

Patent

active

056460694

ABSTRACT:
A metal system that can be adjusted to obtain higher alloying temperatures in AlInAs/GaInAs heterostuctures is disclosed. Increasing the thickness of a Ag layer in the metal system facilitates higher alloying temperatures and, consequently, improved ohmic contact reliability. The system is particularly directed to use in Al.sub.x In.sub.1-x As/Ga.sub.0.47 In.sub.0.53 As with 0.48<x<1 power HFETs.

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