Fabrication process for a SOI substrate

Details Fabrication process for a SOI substrate Fabrication process for a SOI substrate

1996-12-09

2000-08-15

Hiteshew, Felisa

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

117 91, 117 95, 438459, C30B 3308

Patent

active

061030090

ABSTRACT:
A process for fabricating a SOI substrate efficiently removes a non-porous Si region on a porous Si region, and solves the problem of etching of glass substrates and the problem that a relatively thick porous Si region is necessary. The process for fabricating a SOI substrate comprises a step of making a surface layer of a single-crystal Si substrate porous to form a porous single-crystal Si region on a first non-porous single-crystal Si region; a step of forming a second non-porous single-crystal Si region over a surface of the porous single-crystal Si region; a step of bonding a support substrate through an insulating region to a surface of the second non-porous single-crystal Si region; a step of removing the first non-porous single-crystal Si region; and a step of removing the porous single-crystal Si region, wherein the step of removing the first non-porous single-crystal Si region comprises a step of performing dry etching in which an etch rate of non-porous single-crystal Si region is greater than that of porous single-crystal Si region.

REFERENCES:
patent: 5371037 (1994-12-01), Yonehara
patent: 5492859 (1996-02-01), Sakaguchi et al.
patent: 5670411 (1997-09-01), Yonehara et al.
Nobuhiko Sato et al., "Epitaxial Growth On Porous Si For A new Bond And Etch-Back Soi", Proceedings of the Int'l. Symposium on Silicon Materials Science and Technology, 1994, pp. 443-454.
L. Vescan, et al., "Low-Pressure Vapor-Phase Epitaxy of Silicon On Porous Silicon" 1988, vol. 7, pp. 94-98.
K. Sakaguchi, et al., "Extremely High Selective Etching of Porous Si for Single Etch-Stop Bond-and-Etch-Back SOI", International Conference on Solid State Devices and Materials, 1994, pp. 259,161.

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