Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2008-06-17
2008-06-17
Geyer, Scott B. (Department: 2812)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C257SE21575
Reexamination Certificate
active
07387957
ABSTRACT:
In a fabrication process of a semiconductor integrated circuit device, upon effecting connection of an interconnection made of aluminum or aluminum alloy and another interconnection made of Cu or Cu alloy, a barrier conductor film or plug is disposed at the joint portion between these interconnections. Among the interconnection layers formed, the uppermost one is made of a wiring material such as aluminum or aluminum alloy, while the lower one is made of Cu or Cu alloy. The lowest interconnection is made of a conductive material other than Cu or Cu alloy. For example, the conductive material which permits minute processing and has both low resistance and high EM resistance such as tungsten is employed.
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Noguchi Junji
Owada Nobuo
Saito Tatsuyuki
Yamaguchi Hizuru
Antonelli, Terry Stout & Kraus, LLP.
Geyer Scott B.
Hitachi , Ltd.
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