Fabrication process for a semiconductor device

Details Fabrication process for a semiconductor device Fabrication process for a semiconductor device

1997-01-29

1999-11-30

Quach, T. N.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438627, 438643, 438648, 438786, 438792, H01L 2128

Patent

active

059942142

ABSTRACT:
An upper wiring layer formed with a bonding pad portion has a stacked structure of a first titanium nitride film, a titanium film, a second titanium nitride film and an aluminum alloy film on the upper surface of an interlayer insulation layer. Also, the upper wiring has a stacked structure of titanium silicide film, the titanium film, the titanium nitride film and the aluminum alloy film. The fabrication process includes forming the interlayer insulation layer having a silicon oxide film by plasma CVD using silane and N.sub.2 O and processing an upper surface of the interlayer insulation layer by plasma under a nitrogen atmosphere to form a plasma processed nitrogen layer.

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