Fabrication process and structure for a contacted-body silicon-o

Details Fabrication process and structure for a contacted-body silicon-o Fabrication process and structure for a contacted-body silicon-o

1995-04-26

1997-02-25

Saadat, Mahshid D.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257304, 257305, 257349, 257350, 257401, H01L 27108, H01L 2701, H01L 2976

Patent

active

056061889

ABSTRACT:
An SOI DRAM includes a direct body contact between the SOI layer and the silicon substrate, and field-shield isolation positioned on the surface of the SOI structure which extends over the direct body contact. Deep trench storage capacitors are positioned adjacent the direct body contact.

REFERENCES:
patent: 4888631 (1989-12-01), Azuma et al.
patent: 4894697 (1990-01-01), Chin et al.
patent: 4920065 (1990-04-01), Chin et al.
patent: 5001526 (1991-03-01), Gotou
patent: 5049521 (1991-09-01), Belanger et al.
patent: 5055898 (1991-10-01), Beilstein, Jr. et al.
patent: 5102819 (1992-04-01), Matsushita et al.
patent: 5355012 (1994-10-01), Yamaguchi et al.
patent: 5440161 (1995-08-01), Iwamatsu et al.
patent: 5479048 (1995-12-01), Yallup et al.
patent: 5508219 (1996-04-01), Bronner et al.
patent: 5525531 (1996-06-01), Bronner et al.
patent: 5528062 (1996-06-01), Hsieh et al.
IBM Technical Disclosure Bulletin, "Method For Making a Dynamic Random-Access Memory Cell" vol. 32 No. 4A Sep. 1989.

Affiliated with

Also associated with

Rating

Fabrication process and structure for a contacted-body silicon-o does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Fabrication process and structure for a contacted-body silicon-o, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Fabrication process and structure for a contacted-body silicon-o will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1975985