Fabrication of vertical cavity surface emitting laser with curre

Details Fabrication of vertical cavity surface emitting laser with curre Fabrication of vertical cavity surface emitting laser with curre

1997-04-28

1999-04-13

Bowers, Jr., Charles L.

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Dopant introduction into semiconductor region

438 46, 438 47, 438526, 438528, 372 45, 372 46, H01L 2120

Patent

active

058937226

ABSTRACT:
A vertical cavity surface emitting laser having a planar structure, having an implantation or diffusion at the top of the mirror closest to the substrate or at the bottom of the mirror farthest from the substrate, to provide current confinement with the gain region, and having an active region and another mirror formed subsequent to the implantation or diffusion. This structure has an implantation or diffusion that does not damage or detrimentally affect the gain region, and does provide dimensions of current confinement that are accurately ascertained. Alternatively, the implantation or diffusion for current confinement may be placed within the top mirror, and several layers above the active region, still with minimal damage to the gain region and having a well-ascertained current confinement dimension.

REFERENCES:
patent: 5115442 (1992-05-01), Lee et al.
patent: 5256596 (1993-10-01), Ackley et al.
patent: 5316968 (1994-05-01), Choquette

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