Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Diffusing a dopant
Reexamination Certificate
2005-02-01
2005-02-01
Thompson, Craig A. (Department: 2813)
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
Diffusing a dopant
C438S554000
Reexamination Certificate
active
06849528
ABSTRACT:
One aspect of the invention relates to a method of forming P-N junctions within a semiconductor substrate. The method involves providing a temporary impurity species, such as fluorine, within the semiconductor crystal matrix prior to solid source in-diffusion of the primary dopant, such as boron. The impurity atom is a faster diffusing species relative to silicon atoms. During in-diffusion, the temporary impurity species acts to reduce the depth to which the primary dopant diffuses and thereby facilitates the formation of very shallow junctions.
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“Modeling Solid Source Boron Diffusion for Advanced Transistor Applications”, P. Packan, S. Thompson, E. Andideh, S. Yu, M. Giles, J Sandford and M. Bohr, 1998 IEEE, IEDM 98-505, 4 Pages.
“Effect of fluorine on the diffusion of boron in Ion Implanted Si”, Applied Physics Letters, 1998 American Institute of Physics, Daniel F. Downey, Judy W. Chow, Emi Ishida and Kevin S. Jones, vol. 73, No. 9, Aug. 31, 1998, 3 Pages.
Chakravarthi Srinivasan
Chidambaram Periannan
Brady III W. James
Keagy Rose Alyssa
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
Thompson Craig A.
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