Fabrication of two-dimensionally arrayed quantum device

Details Fabrication of two-dimensionally arrayed quantum device Fabrication of two-dimensionally arrayed quantum device

1999-01-11

2000-09-19

Bowers, Charles

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

438939, 438962, H01L 2100

Patent

active

061210757

ABSTRACT:
A quantum device is constituted from a two-dimensional array of quantum dots formed from metal atom aggregates contained in metalloprotein complex. The metalloprotein is arranged on the surface of a substrate having an insulation layer with a pitch of the size of the metalloprotein complex. The diameter of the metal atom aggregates used in the quantum device is 7 nm or smaller, and the pitch of the metalloprotein complex is preferably from 11 to 14 nm.

REFERENCES:
patent: 5281543 (1994-01-01), Fukuzawa et al.
patent: 5412499 (1995-05-01), Chiu et al.
Y. Nakamura et al., Jpn. J. Appl. Phys., 35, L1465-L1467 (1996).
K. Yano et al., Jpn. J. Appl. Phys., 63(12), 1248-1250 (1994).

Affiliated with

Also associated with

Rating

Fabrication of two-dimensionally arrayed quantum device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Fabrication of two-dimensionally arrayed quantum device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Fabrication of two-dimensionally arrayed quantum device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1071965