Fabrication of three dimensional silicon devices by single side,

Details Fabrication of three dimensional silicon devices by single side, Fabrication of three dimensional silicon devices by single side,

1991-12-09

1994-01-11

Dang, Thi

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156651, 1566541, 1566611, 156662, H01L 2100

Patent

active

052777553

ABSTRACT:
Three dimensional silicon structures are fabricated from (100) silicon wafers by a single side, two-step anisotropic etching process using different etchants. The two etch masks are formed one on top of the other on a single side of the wafer prior to the initiation of the two-step etching process, with the mask for the largest and deepest etched recesses formed last and used first. The last formed mask is removed to expose the first formed mask. The anisotropic etchant for the smaller, closer toleranced recesses is chosen to minimize mask etching and improve dimensional control of etched recesses requiring close tolerances and uniform sizes.

REFERENCES:
patent: Re32572 (1988-01-01), Hawkins et al.
patent: 4453305 (1984-06-01), Janes et al.
patent: 4601777 (1986-07-01), Hawkins et al.
patent: 4863560 (1989-09-01), Hawkins
patent: 4875968 (1989-10-01), O'Neill et al.

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