Fabrication of silicon structures by single side, multiple step

Details Fabrication of silicon structures by single side, multiple step Fabrication of silicon structures by single side, multiple step

1988-08-22

1989-09-05

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156633, 156647, 156651, 156653, 156657, 1566611, 156662, 346140R, H01L 21306, R44C 122, C03C 1500, C03C 2506

Patent

active

048635600

ABSTRACT:
Three dimensional silicon structures are fabricated from (100) silicon wafers by a single side, multiple step ODE etching process. All etching masks are formed one on top of the other prior to the initiation of etching, with the coarsest mask formed last and used first. Once the coarse anisotropic etching is completed, the coarse mask is removed and the finer anisotropic etching is done. The preferred embodiment is described using a thermal ink jet channel plate as the three dimensional structure, where coarse etching step provides the reservoir and the fine etching step provides the ink channels.

REFERENCES:
patent: RE32572 (1988-01-01), Hawkins et al.
patent: 4612554 (1986-09-01), Poleshuk
patent: 4638337 (1987-01-01), Torpey et al.
patent: 4639748 (1987-01-01), Drake et al.

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